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FDG327N
October 2001
FDG327N
20V N-Channel PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Features
* 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. RDS(ON) = 100 m @ VGS = 2.5 V RDS(ON) = 140 m @ VGS = 1.8 V * Fast switching speed * Low gate charge (4.5 nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability.
Applications
* DC/DC converter * Power management * Load switch
S D D G
Pin 1
1 2
D D
6 5 4
SC70-6
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 8
(Note 1a)
Units
V V A W C
1.5 6 0.42 0.38 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
300 333
C/W C/W
Package Marking and Ordering Information
Device Marking .27 Device FDG327N Reel Size 7'' Tape width 8mm Quantity 3000 units
(c)2001 Fairchild Semiconductor Corporation
FDG327N Rev C (W)
FDG327N
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min
20
Typ
Max Units
V
Off Characteristics
ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 8 V, VGS = -8 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 A 12 1 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on) ID(on) gFS
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS,
0.4
0.7 -3 57 66 82 72
1.5
V mV/C
ID = 250 A,Referenced to 25C VGS = 4.5 V, VGS = 2.5 V, VGS = 1.8 V, VGS = 4.5 V, VGS = 4.5V, ID = 1.5 A ID = 1.4 A ID = 1.2 A ID = 1.5 A, TJ =125C VDS = 5 V
90 100 140 115
m
6 9
A S
VDS = 10 V, ID = 1.5 A
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V
423 87 48
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6
6 6.5 14 2
12 13 29 4 6.3
ns ns ns ns nC nC nC
VDS = 10 V, ID = 1.5 A, VGS = 4.5 V
4.5 0.89 0.95
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 0.32 A Voltage 0.32
(Note 2)
A V
0.75
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
300C/W when 2 mounted on a 1in pad of 2 oz copper.
b)
333C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDG327N Rev C (W)
FDG327N
Typical Characteristics
16
2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.0V 2.5V 2.0V 1.8 1.6 2.0V 1.4 2.5V 1.2 1 0.8
0 0.5 1 1.5 2 2.5 3 3.5
VGS = 1.8V
ID, DRAIN CURRENT (A)
12
1.8V
8
3.0V 3.5V 4.5V
4
0 VDS, DRAIN-SOURCE VOLTAGE (V)
0
4
8 ID, DRAIN CURRENT (A)
12
16
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.18 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 1.5 A VGS = 4.5V 1.4
ID = 0.8A 0.14
1.2
0.1 TA = 125 oC 0.06 TA = 25 C 0.02
o
1
0.8
0.6 -50 -25 0 25 50 75 100
o
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
12
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
I D, DRAIN CURRENT (A) 9
TA =-55 C
o
25 C 125oC
o
VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55 C 0.01
o
6
3
0.001
0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDG327N Rev C (W)
FDG327N
Typical Characteristics
5 VGS , GATE-SOURCE VOLTAGE (V)
600 ID = 1.5A VDS = 5V 10V 500 CAPACITANCE (pF) 15V CISS 400 300 200 COSS 100 CRSS 0
0 2 4 6
f = 1MHz VGS = 0 V
4
3
2
1
0 Qg, GATE CHARGE (nC)
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W) 10
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT 1ms 10ms
100s
8
SINGLE PULSE RJA = 333C/W TA = 25C
6
1 VGS = 4.5V SINGLE PULSE RJA = 333oC/W TA = 25 C 0.01 0.1 1
o
100ms 1s DC
4
0.1
2
10
100
0 0.0000 0.0001 1
0.001
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1 , TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2 0.1
RJA(t) = r(t) + RJA RJA = 333C/W
0.1
0.05 0.02 0.01 SINGLE PULSE
P(pk)
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDG327N Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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